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C3N2: The Missing Part of Highly Stable Porous Graphitic Carbon Nitride Semiconductors

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Nanoscale Horiz., 2023, Accepted Manuscript
DOI: 10.1039/D2NH00440B, Communication
Xinyong Cai, Jiao Chen, Hongyan Wang, Yuxiang Ni, Yuanzheng Chen, R. Bruce King
Two-dimensional (2D) porous graphitic carbon nitrides (PGCNs) with semiconducting features have attracted wide attention because of built-in pores with various active sites, large surface area, and high physicochemical stability. However,...
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