Nanoscale Horiz., 2017, Advance Article
DOI: 10.1039/C6NH00075D, Communication
DOI: 10.1039/C6NH00075D, Communication
Meng-Lin Tsai, Ming-Yang Li, Yumeng Shi, Lih-Juann Chen, Lain-Jong Li, Jr-Hau He
Monolayer lateral WSe2-MoS2 p-n heterojunctions exhibit a high responsivity of 0.26 A W-1 with an excellent omnidirectional photodetection capability, showing unique characteristics for the future development of sub-nano semiconductor devices and applications.
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Monolayer lateral WSe2-MoS2 p-n heterojunctions exhibit a high responsivity of 0.26 A W-1 with an excellent omnidirectional photodetection capability, showing unique characteristics for the future development of sub-nano semiconductor devices and applications.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry