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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane array

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Nanoscale Horiz., 2020, Accepted Manuscript
DOI: 10.1039/D0NH00410C, Communication
Xiaoming YUAN, Naiyin Wang, Zhenzhen Tian, Fanlu Zhang, Li Li, Mark N. Lockrey, Jun He, Chennupati Jagadish, Hark Hoe Tan
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of heterostructure such...
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