Nanoscale Horiz., 2019, 4,683-688
DOI: 10.1039/C8NH00419F, Communication
DOI: 10.1039/C8NH00419F, Communication
Yann-Wen Lan, Po-Chun Chen, Yun-Yan Lin, Ming-Yang Li, Lain-Jong Li, Yu-Ling Tu, Fu-Liang Yang, Min-Cheng Chen, Kai-Shin Li
Integration of both n-type and p-type MoS2 fin-shaped field effect transistors by using a traditional implantation technique for complementary field effect transistor is demonstrated. The complementary MoS2 inverter with high DC voltage gain of more than 20 is acquired.
The content of this RSS Feed (c) The Royal Society of Chemistry
Integration of both n-type and p-type MoS2 fin-shaped field effect transistors by using a traditional implantation technique for complementary field effect transistor is demonstrated. The complementary MoS2 inverter with high DC voltage gain of more than 20 is acquired.
The content of this RSS Feed (c) The Royal Society of Chemistry