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Nanoscale Horiz., 2025, 10,635-646
DOI: 10.1039/D4NH00493K, Communication
DOI: 10.1039/D4NH00493K, Communication
Wen Ai, Xiaohui Hu, Tao Xu, Jian Yang, Litao Sun
We revealed that n-type/p-type Schottky and n-type Ohmic contacts can be realized at metal/MoSiGeN4 interfaces and used machine learning to describe the Schottky barrier, enabling the design of high-performance Janus MoSiGeN4 electronic devices.
The content of this RSS Feed (c) The Royal Society of Chemistry
We revealed that n-type/p-type Schottky and n-type Ohmic contacts can be realized at metal/MoSiGeN4 interfaces and used machine learning to describe the Schottky barrier, enabling the design of high-performance Janus MoSiGeN4 electronic devices.
The content of this RSS Feed (c) The Royal Society of Chemistry
