Nanoscale Horiz., 2025, Advance Article
DOI: 10.1039/D4NH00493K, Communication
DOI: 10.1039/D4NH00493K, Communication
Wen Ai, Xiaohui Hu, Tao Xu, Jian Yang, Litao Sun
We revealed that n-type/p-type Schottky and n-type Ohmic contacts can be realized at metal/MoSiGeN4 interfaces and used machine learning to describe the Schottky barrier, enabling the design of high-performance Janus MoSiGeN4 electronic devices.
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We revealed that n-type/p-type Schottky and n-type Ohmic contacts can be realized at metal/MoSiGeN4 interfaces and used machine learning to describe the Schottky barrier, enabling the design of high-performance Janus MoSiGeN4 electronic devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry