Nanoscale Horiz., 2025, Accepted Manuscript
DOI: 10.1039/D4NH00493K, Communication
DOI: 10.1039/D4NH00493K, Communication
Wen Ai, Xiaohui Hu, Tao Xu, Jian Yang, Litao Sun
Janus MoSiGeN4 monolayer exhibits exceptional mechanical stability and high electron mobility, which makes it a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact...
The content of this RSS Feed (c) The Royal Society of Chemistry
Janus MoSiGeN4 monolayer exhibits exceptional mechanical stability and high electron mobility, which makes it a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact...
The content of this RSS Feed (c) The Royal Society of Chemistry