Nanoscale Horiz., 2025, Accepted Manuscript
DOI: 10.1039/D4NH00539B, Communication
DOI: 10.1039/D4NH00539B, Communication
Open Access
  This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.Borna Radatović, Hao Li, Roberto D'Agosta, Andres Castellanos-Gomez
We have investigated the effect of the uniaxial strain on the electrical properties of few-layer ZrSe3 devices under compressive and tensile strain, applied up to ± 0.62 % along different...
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We have investigated the effect of the uniaxial strain on the electrical properties of few-layer ZrSe3 devices under compressive and tensile strain, applied up to ± 0.62 % along different...
The content of this RSS Feed (c) The Royal Society of Chemistry