Nanoscale Horiz., 2019, Accepted Manuscript
DOI: 10.1039/C8NH00419F, Communication
DOI: 10.1039/C8NH00419F, Communication
YannWen Lan, Po-Chun Chen, Yun-Yan Lin, Ming-Yang Li, Lain-Jong Li, Yu-Lin Tu, Fu-Liang Yang, Min-Cheng Chen, Kai-Shin Li
Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation...
The content of this RSS Feed (c) The Royal Society of Chemistry
Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation...
The content of this RSS Feed (c) The Royal Society of Chemistry