Nanoscale Horiz., 2025, Advance Article
DOI: 10.1039/D4NH00441H, Communication
DOI: 10.1039/D4NH00441H, Communication
Open Access
  This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.Hejin Yan, Hongfei Chen, Xiangyue Cui, Qiye Guan, Bowen Wang, Yongqing Cai
Oxygen doping on MoS2 provides a promising method for sulfur vacancy healing, carrier mass controlling, contact resistance reduction, and anchoring of surface electron dopants.
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Oxygen doping on MoS2 provides a promising method for sulfur vacancy healing, carrier mass controlling, contact resistance reduction, and anchoring of surface electron dopants.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry