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Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00407H, Communication
DOI: 10.1039/D4NH00407H, Communication
Spencer Gellerup, Reece Emery, Scott T. Retterer, Steven J. Randolph, Philip D. Rack
Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e− while varying beam energy, beam current, dwell time, and XeF2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
To cite this article before page numbers are assigned, use the DOI form of citation above.
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Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e− while varying beam energy, beam current, dwell time, and XeF2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
