Nanoscale Horiz., 2024, 9,1990-1998
DOI: 10.1039/D4NH00339J, Communication
DOI: 10.1039/D4NH00339J, Communication
Open Access
  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Minjae Kim, Yongsu Lee, Kyuheon Kim, Giang-Hoang Pham, Kiyung Kim, Jae Hyeon Jun, Hae-won Lee, Seongbeen Yoon, Hyeon Jun Hwang, Myung Mo Sung, Byoung Hun Lee
This study proposes an ultrathin tellurium (Te) atomic layer deposition process with a TeOx seed layer to overcome large electrical hysteresis. It also identifies causes of defects, aiding high-performance p-type inorganic transistors.
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This study proposes an ultrathin tellurium (Te) atomic layer deposition process with a TeOx seed layer to overcome large electrical hysteresis. It also identifies causes of defects, aiding high-performance p-type inorganic transistors.
The content of this RSS Feed (c) The Royal Society of Chemistry