Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00339J, Communication
DOI: 10.1039/D4NH00339J, Communication
Open Access
  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Minjae Kim, Yongsu Lee, Kyuheon Kim, Giang-Hoang Pham, Kiyung Kim, Jae Hyeon Jun, Hae-won Lee, Seongbeen Yoon, Hyeon Jun Hwang, Myung Mo Sung, Byoung Hun Lee
This study proposes an ultrathin tellurium (Te) atomic layer deposition process with a TeOx seed layer to overcome large electrical hysteresis. It also identifies causes of defects, aiding high-performance p-type inorganic transistors.
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This study proposes an ultrathin tellurium (Te) atomic layer deposition process with a TeOx seed layer to overcome large electrical hysteresis. It also identifies causes of defects, aiding high-performance p-type inorganic transistors.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry