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Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

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Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00057A, Review Article
Jae Seok Hur, Sungsoo Lee, Jiwon Moon, Hang-Gyo Jung, Jongwook Jeon, Seong Hun Yoon, Jin-Hong Park, Jae Kyeong Jeong
2D DRAM scaling has reached its limits. Silicon integration encounters cost and performance challenges, thus prompting exploration of alternative materials. This study examines 3D DRAM structures, compares OSs and TMDs, and evaluates their potential.
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