Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Nanoscale Horiz., 2024, 9,1417-1431
DOI: 10.1039/D4NH00030G, Review Article

Byeongchan Kim, Seojoo Lee, Jin-Hong Park
We discussed 2D semiconductors as alternative channel materials for advanced 3D transistors, such as GAAFETs and CFETs, and assessed various contact engineering techniques for their applicability toward advanced 3D-structured transistors.
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