Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00035H, Communication
DOI: 10.1039/D4NH00035H, Communication
Hu Zhang, Meng Li, Shao-Bo Mi, Shao-Dong Cheng, Lu Lu, Zhi-Gang Chen
An atomic-scale electron beam lithography technique is adopted to fabricate GeTe-based quantum devices compromising nanopillars or superlattices of c- and h-GeTe in α-GeTe.
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An atomic-scale electron beam lithography technique is adopted to fabricate GeTe-based quantum devices compromising nanopillars or superlattices of c- and h-GeTe in α-GeTe.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
