Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00030G, Review Article
DOI: 10.1039/D4NH00030G, Review Article
Byeongchan Kim, Seojoo Lee, Jin-Hong Park
We discussed 2D semiconductors as alternative channel materials for advanced 3D transistors, such as GAAFETs and CFETs, and assessed various contact engineering techniques for their applicability toward advanced 3D-structured transistors.
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We discussed 2D semiconductors as alternative channel materials for advanced 3D transistors, such as GAAFETs and CFETs, and assessed various contact engineering techniques for their applicability toward advanced 3D-structured transistors.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry