Nanoscale Horiz., 2024, 9,752-763
DOI: 10.1039/D3NH00524K, Communication
DOI: 10.1039/D3NH00524K, Communication
Lingqi Li, Heng Xiang, Haofei Zheng, Yu-Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah-Wee Ang
This work demonstrated a high-performance ferroelectric field-effect transistor (FeFET) via the integration of HZO and 2D MoS2, showing efficacy in processing diverse real-life tasks within a reservoir computing system.
The content of this RSS Feed (c) The Royal Society of Chemistry
This work demonstrated a high-performance ferroelectric field-effect transistor (FeFET) via the integration of HZO and 2D MoS2, showing efficacy in processing diverse real-life tasks within a reservoir computing system.
The content of this RSS Feed (c) The Royal Society of Chemistry
