Nanoscale Horiz., 2024, 9,853-862
DOI: 10.1039/D3NH00571B, Communication
DOI: 10.1039/D3NH00571B, Communication
Yu-Rim Jeon, Deji Akinwande, Changhwan Choi
The identified mechanism of the high-k metal oxide by XPS, XRR, and TEM applied to a synaptic device as a diffusion memristor with control and switching layers that could control Ag ion migration, emulating the synaptic plasticity.
The content of this RSS Feed (c) The Royal Society of Chemistry
The identified mechanism of the high-k metal oxide by XPS, XRR, and TEM applied to a synaptic device as a diffusion memristor with control and switching layers that could control Ag ion migration, emulating the synaptic plasticity.
The content of this RSS Feed (c) The Royal Society of Chemistry