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Heterogeneous reservoir computing in second-order Ta2O5/HfO2 memristors

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Nanoscale Horiz., 2024, 9,427-437
DOI: 10.1039/D3NH00493G, Communication
Nestor Ghenzi, Tae Won Park, Seung Soo Kim, Hae Jin Kim, Yoon Ho Jang, Kyung Seok Woo, Cheol Seong Hwang
The mixture of leaky and self-rectifying memristors in the reservoir increases the accuracy in MNIST-digits recognition task.
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