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Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devices

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Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D4NH00072B, Communication
Open Access Open Access
Creative Commons Licence&nbsp This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Matteo Galetta, Antonio La Porta, Bert Jan Offrein, Valeria Bragaglia
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems.
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