Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D3NH00573A, Communication
DOI: 10.1039/D3NH00573A, Communication
Open Access
  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Santhanu Panikar Ramanandan, Joel Reñé Sapera, Alban Morelle, Sara Martí-Sánchez, Alok Rudra, Jordi Arbiol, Vladimir G. Dubrovskii, Anna Fontcuberta i Morral
Schematics on the influence of Ge islands on the formation of continuous nanowires on silicon. In selective area epitaxy, islands with low density and low aspect ratio merge together to produce a continuous Ge nanowire on a silicon substrate.
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Schematics on the influence of Ge islands on the formation of continuous nanowires on silicon. In selective area epitaxy, islands with low density and low aspect ratio merge together to produce a continuous Ge nanowire on a silicon substrate.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry