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Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

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Nanoscale Horiz., 2024, Accepted Manuscript
DOI: 10.1039/D3NH00520H, Communication
Open Access Open Access
Creative Commons Licence&nbsp This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Pascal Stasner, Nils Kopperberg, Kristoffer Schnieders, Tyler Hennen, Stefan Wiefels, Stephan Menzel, Rainer Waser, Dirk J. Wouters
Write-variability and resistance instability are major reliability concerns impeding implementation of oxide-based memristive devices in neuromorphic systems. The root cause of the reliability issues is the stochastic nature of conductive...
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