Nanoscale Horiz., 2024, Advance Article
DOI: 10.1039/D3NH00524K, Communication
DOI: 10.1039/D3NH00524K, Communication
Lingqi Li, Heng Xiang, Haofei Zheng, Yu-Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah-Wee Ang
This work demonstrated a high-performance ferroelectric field-effect transistor (FeFET) via the integration of HZO and 2D MoS2, showing efficacy in processing diverse real-life tasks within a reservoir computing system.
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This work demonstrated a high-performance ferroelectric field-effect transistor (FeFET) via the integration of HZO and 2D MoS2, showing efficacy in processing diverse real-life tasks within a reservoir computing system.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry