Nanoscale Horiz., 2024, 9,264-277
DOI: 10.1039/D3NH00450C, Communication
DOI: 10.1039/D3NH00450C, Communication
Yu Shu, Ting Li, Naihua Miao, Jian Gou, Xiaochun Huang, Zhou Cui, Rui Xiong, Cuilian Wen, Jian Zhou, Baisheng Sa, Zhimei Sun
This study revealed the transition from Schottky to Ohmic/quasi-Ohmic contacts within the metal–MoSSe junctions and employed machine learning to predict the Schottky barrier, thus facilitating the realization of Ohmic contact in Janus MoSSe devices.
The content of this RSS Feed (c) The Royal Society of Chemistry
This study revealed the transition from Schottky to Ohmic/quasi-Ohmic contacts within the metal–MoSSe junctions and employed machine learning to predict the Schottky barrier, thus facilitating the realization of Ohmic contact in Janus MoSSe devices.
The content of this RSS Feed (c) The Royal Society of Chemistry