Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Nanoscale Horiz., 2023, 8,1411-1416
DOI: 10.1039/D3NH00162H, Communication

Open Access

&nbsp This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.

Yi Wang, Jack Howley, Erica N. Faria, Chen Huang, Sadie Carter-Searjeant, Simon Fairclough, Angus Kirkland, Jason J. Davis, Falak Naz, Muhammad Tariq Sajjad, Jose M. Goicoechea, Mark Green
In this paper, we report the use of phosphinecarboxamide as a convenient, air and moisture tolerant group-V precursor for the simple synthesis of InP-based quantum dots.
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