Nanoscale Horiz., 2022, Accepted Manuscript
DOI: 10.1039/D2NH00396A, Communication
DOI: 10.1039/D2NH00396A, Communication
Wen-Hao Chang, Chun-I Lu, Tilo H. Yang, Shu-Ting Yang, Kristan Bryan Simbulan, Chih-Pin Lin, Shang-Hsien Hsieh, Jyun-Hong Chen, Kai-Shin Li, Chia-Hao Chen, Tuo-Hung Hou, Ting-Hua Lu, YannWen Lan
The negative differential resistance (NDR) effect is widely investigated for the development of various electronics. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) have...
The content of this RSS Feed (c) The Royal Society of Chemistry
The negative differential resistance (NDR) effect is widely investigated for the development of various electronics. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) have...
The content of this RSS Feed (c) The Royal Society of Chemistry